Hey guys, Samsung Electronics have recently started the sampling of 50nm DDR3 memory modules. This new device will allow it to fabricate more power efficient memory modules, enabling it at the same time to produce devices with capacities of up to 16GB.
The device features 2Gb capacity which offer two times the density of the current 1Gb chips while also delivering 40 percent power efficiency over their predecessors. The 2Gb module is up to 1.6 times faster than an 800Mbps 1Gb-based dual-die package and also reduces heat emissions due to the smaller number of DDR3 chips.
The new form factor allows leveraged configurations. This way, registered in-line memory modules (RIMMs) can be configured with capacities of up to 8GB, while small outline dual in-line memory modules (SODIMMs), which are mainly designed for notebook usage, can rise to 4GB configurations. Desktop and server applications can gain even more capacity through the use of dual-die packages, which enables their densities to be leveraged to 16GB. The new 2Gb devices are able to support data rates of up to 1.3 Gb/s at 1.5 or 1.35 volts.
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